Publications

1) Radovi objavljeni u časopisima sa SCI liste:

1. G.S. Ristić, N.D. Vasović, "Interface and oxide state behaviors of commercial n-channel power MOSFETs during high electric field stress and thermal annealing at 150 oC", Semiconductor Science & Technology, 49 (7), pp. 1140 –1152 (2011); kategorija časopisa: M22, impakt faktor: 1.323.

2. G.S. Ristić, N.D. Vasović, M. Kovačević, A.B. Jakšić, "The sensitivity of 100 nm RADFETs with zero gate bias up to dose of 230 Gy(Si)", Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atom, 269, 2703 – 2708 (2011); kategorija časopisa: M21, impakt faktor: 1.156.

3. G.S. Ristić, "Defect behaviors during high electric field stress of p-channel power MOSFETs ", IEEE Trans. on Device and Materials Reliability, accepted for publication; kategorija časopisa: M21, impakt faktor: 1.947.

4. S. Savovic, A. Djordjevich, G. Ristic, Numerical solution of the transport equation describing the radon transport from subsurface soil to buildings, Radiation Protection Dosimetry, accepted for publications, kategorija časopisa: M22, impakt faktor: 0.966.

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