Prof. Goran Ristić was born in 1964. in Niš, Serbia. He received the B.Sc. degree in physics, and the M.Sc. and Ph.D. degrees in electronics from the University of Niš, Serbia, in 1990, 1994, and 1998, respectively. Since 1990, he has been with the Faculty of Electronic Engineering, University of Niš, where he is a Full Professor of General Physics, Physical Electronics and Quantum and Statistical Physics, and a Head of Applied Physics Laboratory (APL). From 2001 to 2003, he was working at University of Toronto, Department of Medical Biophysics and Medical Imaging. He has authored or co-authored more than 80 research papers, including more than 50 papers published in refereed international journals. His research interests include the pMOS dosimeters, the reliability of MOS transistor (the radiation and postradiation effects, as well as the electrical and postelectrical stress effects), the electrical discharge and recombination processes in the afterglow periods of gases, as well as the digital X-ray imaging. He is the project leader of FP7 project lasting from 2008 to 2012, and of four year national project started from January 2011.

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