Sanja Aleksić, M.Sc. was born on July 26, 1971. in Berane, Montenegro. She received the B.Sc. degree in physics in Department of physics, from the Faculty of Mathematics and Natural Sciences, and the M.Sc. degree in electronics from the Faculty of Electronic Engineering, University of Niš, Serbia. She is autored or co-autored six research papers. Her research interests are problems of MOS transistors reliability. Special area of investigation is the physico-chemical processes which are responsible for the shanges in the gate oxide of VDMOSFETs during its exposure to some kind of stress, like as high electric filed stress or ionizing radiation.

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