Papers published in the Journals from SCI list:


2012.

1. N.D. Vasović, G.S. Ristić, "A switching system based on microcontroller for successive applying of MGT and CPT on MOSFETs", Measurement, 45, 1922-1926, (2012) (doi: 10.1016/j.measurement.2012.03.011).

2. N.D. Vasović, G.S. Ristić, "A new microcontroller-based RADFET dosimeter reader", Radiation Measurements, 47 (4), 272-276 (April 2012) (http://dx.doi.org/10.1016/j.radmeas.2012.01.017)

3. M. Todorović, N.D. Vasović, G.S. Ristić, "A system for gas electrical breakdown time delay measurements based on a microcontroller", Measurement Science & Technology, 23 (1) 015901 (9pp) (2012) (doi: 10.1088/0957-0233/23/1/015901).

4. G.S. Ristić, "Defect behaviors during high electric field stress of p-channel power MOSFETs", IEEE Trans. on Device and Materials Reliability, 12 (1), 94 – 100 (March 2012) (doi: 10.1109/TDMR.2011.2168399).

5. D. Sokolovic, B. Djordjevic, G. Kocic, P. Babovic, G. Ristic, Z. Stanojkovic, D.M. Sokolovic, A. Veljkovic, A. Jankovic, Z. Radovanovic, "Melatonin effect on body mass and behaviour of rats during exposure to microwave radiation from mobile phone", Bratislava Medical Journal, 113 (5), 265-269 (2012) (doi:10.4149/BLL_2012_062).

6. S. Savovic, A. Djordjevich, G. Ristic, "Numerical solution of the transport equation describing the radon transport from subsurface soil to buildings", Radiation Protection Dosimetry, 150 (2), 213 - 216 (2012) (doi: 10.1093/rpd/ncr397).

7. G.S. Ristić, N.D. Vasović, A.B. Jakšić, "The fixed oxide traps modelling during isothermal and isochronal annealing of irradiated RADFETs", Journal of Physics D: Applied Physics, accepted for publication.

2011.

1. G.S. Ristić, N.D. Vasović, M. Kovačević, A.B. Jakšić, "The sensitivity of 100 nm RADFETs with zero gate bias up to dose of 230 Gy(Si)", Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atom, 269, 2703 – 2708 (2011)

2. G.S. Ristić, N.D. Vasović, "Interface and oxide state behaviors of commercial n-channel power MOSFETs during high electric field stress and thermal annealing at 150 °C", Semiconductor Science & Technology, 49 (7), pp. 1140 – 1152 (2011)

3. E.V. Jelenković, G.S. Ristić, M.M. Pejović, M. M. Jevtić, K. Jha Shrawan, M. Videnović-Misić, M. Pejović, K.Y. Tong, Effect of fluorination and hydrogenation by ion implantation on reliability of poly-Si TFTs under gamma irradiation, Journal of Physics D: Applied Physics, 44 (1), 015101 (7 pp) (2011)

4. M. Pejović, M. Pejović, A. Jakšić, "Radiation-sensitive field effect transistor response to gamma-ray irradiation", Nuclear Technology & Radiation Protection, 26 (1), 25-31, 2011

5. E.N. Živanović, M.M. Pejović, M. Pejović and N.T. Nesić, "Analysis of the statistical nature of electrical breakdown time delay in nitrogen at 6.6 mbar pressure in presence of positive ions and N(4S) atoms", Contributions to Plasma Physics, 51 (9), 877, 2011.

6. N. Nešić, M. Pejović, M. Pejović, E. Živanović, "The influence of additional electrons on memory effect in nitrogen at low pressures", Journal of Physics D: Applied Physics, 44, 095203, 2011.

7. M. Pejović, M. Pejović, K. Stanković, "Experimental investigation of breakdown voltage and electrical breakdown time delay of commercial gas discharge tubes", Japanese Journal of Applied Physics, 50 (8), 2011

2010.

1. M. M. Pejović, E. N. Zivanović, M. Pejović, J. P. Karamarković, Analysis of processes responsible for the memory effect in air at low pressures, plasma sources science & technology, 19 (4), 045021 (9pp) (2010)

2009.

1. G.S. Ristić, "Thermal and UV annealing of irradiated pMOS dosimetric transistors", Journal of Physics D: Applied Physics, 42, 135101 (12 pp) (2009).

2. S. Jha, E.V. Jelenković, M.M. Pejović, G.S. Ristić, M. Pejović, K.Y. Tong, C. Surya, I. Bello and W.J. Zhang, "Stability of submicron AlGaN/GaN HEMT devices irradiated by gamma rays", Microelectronic Engineering, 86 (1), pp. 37-40 (2009).

2008.

1. G.S. Ristić, "Influence of ionizing radiation and hot carrier injection on metal-oxide-semiconductor transistors", Journal of Physics D: Applied Physics, Topical Review, 41, pp. 023001 (19 pp) (2008).

2. T.N. Nešić, G.S. Ristić, J.P. Karamarković, M.M. Pejović, Modelling of time delay of electrical breakdown for nitrogen-filled tubes at pressures of 6.6 and 13.3 mbar in the increase region of the memory curve, Journal of Physics D: Applied Physics, 41, 225205 (10 pp) (2008).

3. M. Aleksić, A. B. Jakšić, M. M. Pejović, "Repeating of positive and negative high electric field stress and corresponding thermal post-stress annealing of the n-channel power VDMOSFETs", Solid-State Electronics, 52 (8), pp. 1197-1201 (2008).

4. M.M. Pejović and M.M. Pejović, “Contribution of statistical time delay and formative time to total electrical breakdown time delay in argon for different afterglow periods”, J. Vacuum Science and Technology A, 26 (5), 1326-1330 (2008).

5. M.M. Pejović and M.M. Pejović, “Memory effect in argon in the presence of vacuum and gas electrical breakdown mechanisms”, Appl. Phys. Lett. Vol. 92, pp. 011507-1-2 (2008).

6. M.M. Pejović, J.P. Karamarković, G.S. Ristić and M.M. Pejović “Analysis of neutral active particles loss in afterglow in krypton at 2.6 mbar pressure”, Physics of Plasmas, vol. 15, pp. 013502-1-1 (2008).

2007.

1. G.S. Ristić, M.M. Pejović and A.B. Jakšić, "Physico-chemical processes in metal-oxide-semiconductor transistors with thick gate oxide during high electric field stress", J. Non-Crystalline Solids, vol. 353 , pp. 170-179 (2007).

2. A.D. Semenov, H. Richter, H.-W. Hübers, B. Günter, A. Smirnov, K.S. Il’in, M. Siegel and J.P. Karamarković, ”Terahertz performance of integrated lens antennas with a hot-electron bolometer”, IEEE Trans. on Microwave Theory and Techniques, vol. 55, No. 2, pp. 239-247 (2007).

2006.

1. G. S. Ristić, M. M. Pejović and A. B. Jakšić, "Defect behaviors in n-channel power VDMOSFETs during HEFS and thermal post-HEFS annealing", Applied Surface Science, 252, pp. 3023-3032 (2006).

2. M. M. Pejović, N. T. Nešić and M. M. Pejović, "Analysis of low-pressure dc breakdown in nitrogen between two spherical iron electrodes", Physics of Plasmas, 13, pp. 022108-1-022108-8 (2006).

3. A. R. Lubinsky, W. Zhao, G. Ristic, J. A. Rowlands, “Screen optics effects on detective quantum efficiency in digital radiography: Zero-frequency effects”, Medical Physics, 33, pp. 1499-1509 (2006).

4. Č.A. Maluckov, J.P. Karamarković, M.K. Radović and M.M. Pejović, "Statistical analysis of the electrical time delay distribution in krypton", Plasmas of Physics, Vol. 13, pp. 08352-9, 2006

5. M.M. Pejović and M.M. Pejović, "Investigations of breakdown voltage and time delay of gas-filled surge arresters", J. Phys. D: Appl. Phys., Vol. 39, pp. 4417-4422, 2006.

6. Č. A. Maluckov, J. P. Karamarković, M. K. Radović and M. M. Pejović, "The application of convolution-based statistical model on the electrical breakdown time delay distributions in neon under gamma and UV radiation", IEEE Transaction on Plasma Science, 34 (1), pp. 2-6 (2006).

2005.

1. G. S. Ristić, M. M. Pejović and A. B. Jakšić, "Fowler-Nordheim high electric field stress of power VDMOSFETs", Solid-State Electronics, 49, pp. 1140-1152 (2005).

2. Č. A. Maluckov, J. P. Karamarković and M. K. Radović, "Investigation of the influence of overvoltage, auxiliary glow current and relaxation time on the electrical breakdown time delay distributions in neon", Contrib. Plasma Physics, 45 (2), pp. 118-129 (2005).

3. M. M. Pejović, "Digital system for vacuum and gas-filled devices testing", Review of Scientific Instruments, 76, pp. 015102-1 - 015102-5 (2005).

4. M. M. Pejović, M. M. Pejović and G. S. Ristić, "Gamma and UV radiation effects on breakdown voltage of neon-filled tube", IEEE Transaction of Plasma Science, accepted for publication (2005).

5. M. M. Pejović and M. M. Pejović, "The influence of some species formed during the discharge and gamma and UV radiation on breakdown voltage and time delay in nitrogen and neon at low pressure" Plasma Sources Science and Technology, 14, pp. 492-500 (2005).

2004.

1. W. Zhao, G. Ristić and J.A. Rowlands, "X-ray imaging performance of structured cesium iodide scintillators", Medical Physics, 31 (9), pp. 2594-2605 (2004).

2. Č. A. Maluckov, J. P. Karamarković, M. K. Radović and M.M. Pejović, "The application of convolution-based statistical model on the electrical breakdown time delay distributions in neon", Physics of Plasmas, 11 (11), pp. 5328-5334 (2004).

3. M. M. Pejović, E. N. Živanovic and M. M. Pejović, "Kinetics of ions and neutral active states in the afterglow and their influence on the memory effect in nitrogen at low pressures", J. Phys. D: Appl. Phys., 37, pp. 200-210 (2004).

4. M. M. Pejović, "Analysis of the memory effect in a nitrogen-filled tube at 6.6 mbar pressure for different cathode material using the time delay method", Physics of Plasmas, 11 (8), pp. 3778-3786 (2004).

5. N. Janković, T. Pešić, J. Karamarković, "1D Physical Based Non-Quasi Static BJT Circuit Model Based on the Equivalent Transmission Line Analysis", Journal of Computational Electronics, 3, pp. 13-25 (2004).

2003.

1. G. S. Ristić, M. M. Pejović and A. B. Jakšić, "Comparison between post-irradiation annealing and post-high electric field stress annealing of n-channel power VDMOSFETs", Applied Surface Science, 220, pp. 181-185 (2003).

2. M. M. Pejović, Č. S. Miliosavljević and M. M. Pejović, "Electrical system for measurement of breakdown voltage of vacuum and gas-filled tubes using a dynamic method", Rev. Sci. Instr., 74, (6), pp. 3127-3129 (2003).

3. M. M. Pejović, Č. S. Milosavljević and M. M. Pejović, "The estimation of static breakdown voltage for gas-filled tubes at low pressures using dynamic mtehod", IEEE Trans. Plasma. Sci., 31, (4), pp. 776-780 (2003).

4. I. Spasić, M. K. Radović, M. M. Pejović and Č. A. Maluckov, "The statistical time-delay and the breakdown formative time contributions to memory effect in Ne at 7 mbar pressure", J. Phys. D: Appl. Phys., 36, pp. 2515-2520 (2003).

5. Č. A. Maluckov, J. P. Karamarković and M. K. Radović, "Statistical analysis of electrical breakdown time delay distributions in neon tube at 13.3 mbar", IEEE Transaction on Plasma Science, 31 (5), pp. 1344-1348 (2003).

2002.

1. M. M. Pejović and G. S. Ristić, "Analysis of mechanisms which lead to electrical breakdown in argon using the time delay method", Physics of Plasmas, 9 (1), pp. 364-370 (2002).

2. M. M. Pejović and G. S. Ristić, "Memory effects in argon, nitrogen and hydrogen", IEEE Transaction of Plasma Science, 30 (3), pp. 1315-1319 (2002).

3. M. M. Pejović, G. S. Ristić and J. P. Karamarković, "Electrical breakdown in low pressure gases", Journal of Physics D: Applied Physics, Topical Review, 35, R91-R103 (2002).

4. M. M. Pejović, G. S. Ristić, Č. S. Milosavljević and M. M. Pejović, "Influence of tube wall material type and tube temperature on the recombination processes of nitrogen ions and atoms in afterglow", Journal of Physics D: Applied Physics, 35, pp. 2536-2542 (2002).

5. A. Jakšić, G. Ristić, M. Pejović, A. Mohammadzadeh, C. Sudre, and W. Lane, "Gamma-ray irradiation and post-irradiation responses of high dose range RADFETs", IEEE Trans. Nuclear Science, 49 (3), pp. 1356-1363 (2002).

6. T. Pešić, N. Janković, J. Karamarković, "Current Gain Frequency Characteristics of Ultra-Narrow Base Bipolar Transistors", Electronics, 6 (1), pp. 30-33 (2002).

2001.

1. Z. Lj. Petrović, V. Lj. Marković, M. M. Pejović and S. R. Gocićc, "Memory effects in the afterglow:Open questions on long-lived species and the role of surface processes", J. Phys. D: Appl. Phys., 34, pp. 1756-1768 (2001).

2000.

1. G. S. Ristić, M. M. Pejović and A. B. Jakšić, "Analysis of postirradiation annealing of n-channel power vertical double-diffused metal-oxide-semiconductor transistors", Journal of Applied Physics, 87 (7), pp. 3468-3477 (2000).

2. A. B. Jakšić, G. S. Ristić and M. M. Pejović, "New experimental evidence of latent interface-trap build up in power VDMOSFETs", IEEE Trans. Nuclear Science, 47 (3), pp. 580-586 (2000).

3. A. B. Jakšić, M. M. Pejović and G. S. Ristić, "Isothermal and isochronal annealing experiments on irradiated commercial power VDMOSFETs", IEEE Trans. Nuclear Science, 47 (3), pp. 659-666 (2000).

4. A. B. Jakšić, M. M. Pejović and G. S. Ristić, "Properties of latent interface-trap building in irradiated metal-oxide-semiconductor transistors determined by switched bias isothermal annealing experiments", Applied Physics Letters, 77 (25), pp. 4220-4222 (2000).

5. M. M. Pejović and G. S. Ristić, "Nitrogen-filled tube as a sensor of ionizing radiation", Review of Scientific Instruments, 71 (6), pp. 2377-2379 (2000).

6. M. M. Pejović and G. S. Ristić, "Analysis of mechanisms which lead to electrical breakdown in a krypton-filled tube using the time delay method", Journal of Physics D: Applied Physics, 33 (21), pp. 2786-2790 (2000).

7. J. P. Karamarković, G. S. Ristić and M. M. Pejović, "The analysis of breakdown probability using time delay method", Bulgarin J. Phys., 27 (3), pp. 42-45 (2000).

8. T. Pešić, N. Janković, J. Karamarković, "Distributed Parameters BJT Model for Arbitrary Injection Level", Electronics, 4 (2), pp. 58-63 (2000).

1999.

1. M. M. Pejović and G. S. Ristić, Č. S. Milosavljević, P. D. Vuković and J. P. Karamarković, "Statistical reliability of time delay values for nitrogen-filled tube at pressure of 1.3 mbar", VACUUM- Surface Engineering, Surface Instrumentation and Vacuum Technology, 53 (3-4), pp.435-440 (1999).

2. M. M. Pejović, G. S. Ristić and Z. Lj. Petrović, "Influence of light from nitrogen-filled lamps on time delay of electrical breakdown in nitrogen-filled tubes", Journal of Physics D: Applied Physics, 32 (13), pp. 1489-1493 (1999).

1998.

1. G. S. Ristić, M. Pejović and A. Jakšić, "Modelling of kinetics of creation and passivation of interface traps in metal-oxide-semiconductor transistors during postirradiation annealing'', Journal of Applied Physics, 83 (6), pp. 2994-3000 (1998).

2. G. S. Ristić, M. M. Pejović and A. B. Jakšić, "Numerical simulation of creation-passivation kinetics of interface traps in irradiated n-channel power VDMOSFETs during thermal annealing with various gate biases", Microelectronic Engineering, 40 (2), pp. 51-60 (1998).

3. A. Jakšić, M. Pejović, G. Ristić, S. Raković, "Latent interface-trap generation in commercial power VDMOSFETs", IEEE Trans. Nuclear Science, 45 (3), pp.1365-1371 (1998).

4. M. Pejović, A. Jakšić and G. Ristić, "The behaviour of radiation-induced gate-oxide defects in MOSFETs during annealing at 140 C", Journal of Non-Crystalline Solid, 240, pp. 182-192 (1998).

5. M. M. Pejović, J. P. Karamarković and G. S. Ristić, "The application of time delay method for analysis of processes which initiate electrical breakdown in 1.3 mbar nitrogen", IEEE Transaction of Plasma Science, 26 (6), pp. 1733-1737 (1998).

1997.

1. M. Pejović, G. Ristić and A. Jakšić, "Formation and passivation of interface traps in irradiated n-channel power VDMOSFETs during thermal annealing", Applied Surface Science, 108 (1), pp. 141-148 (1997).

2. M. Pejović, G. Ristić, "Creation and passivation of interface traps in irradiated MOS transistors during annealing at different temperatures", Solid-State Electronics, 41 (5), pp. 715-720 (1997).

3. M. Pejović, A. Jakšić, G. Ristić and B. Baljošević, "Processes in n-channel MOSFETs during postirradiation thermal annealing", Radiation Physics and Chemistry, 49 (5), pp. 521-525 (1997).

4. G. Ristić, A. Jakšić and M. Pejović, "pMOS dosimetric transistors with two-layer gate oxide", Sensors and Actuators: A. Physical, A 63, pp. 129-134 (1997).

5. M. M. Pejović, V. Lj. Marković, G. S. Ristić and S. Mekić, "Efficiency of copper and gold cathode in initiation of secondary emission in nitrogen-filled tube", VACUUM- Surface Engineering, Surface Instrumentation and Vacuum Technology, 48 (6), pp. 129-134 (1997).

6. V. Lj. Marković, Z. Lj. Petrović and M. M. Pejović, "Modelling of charged particle decay in nitrogen afterglow", Plasma Sources Sci. Technol., 6, pp. 240-246 (1997).

1996.

1. A. Jakšić, G. Ristić and M. Pejović, "Analysis of the processes in power VDMOSFETs during gamma-ray irradiation and subsequent thermal annealing", Physica Status Solidi (a), 155 (2), pp. 371-379 (1996).

2. G. Ristić, S. Golubović and M. Pejović, "Sensitivity and fading of pMOS dosimeters with thick gate oxide", Sensors and Actuators: A. Physical, A 51, pp. 153-158 (1996).

3. M. M. Pejović, V. Lj. Marković, G. S. Ristić and S. Mekić, "Determination of formative time of electrical breakdown in nitrogen-filled tube", IEE Proceedings - Science, Measurement and Technology, 143 (6), pp. 413-415 (1996).

4. V. Marković, M. Pejović and Z. Petrović, "Surface recombination in the breakdown time delay experiments: the effect of different cathode materials", Plasma Chem. and Plasma Processing, 16, pp. 195-205 (1996).

5. V. Lj. Marković, Z. Lj. Petrović and M. M. Pejović, "Gas phase model of surface recombinations for N2 afterglow", J. Phys. III France, 6, pp. 959-973 (1996).

1995.

1. M. Pejović, J. Živković, Č. Milosavljevic and G. Ristić, "Formative time determination in nitrogen-filled tube using statistical methods", Japanese Journal of Applied Physics (Part 1), 34 (3), pp. 1652-1656 (1995).

2. G. Ristić, S. Golubović, M. Pejović, "P-channel metal-oxide-semiconductor dosimeter fading dependencies on gate bias and oxide thickness", Applied Physics Letters, 66 (1), pp. 88-89 (1995).

3. N. Stojadinović, M. Pejović, S. Golubović, G. Ristić, V. Davidovic and S. Dimitrijev, "Effect of radiation-induced oxide-trapped charge on mobility in p-channel MOSFETs", Electronics Letters, 31 (6), pp. 497-498 (1995).

4. M. Pejović, S. Golubović, G. Ristić, "Temperature-induced rebound in Al-gate NMOS transistors", IEE Proceedings-G: Circuits, Devices and Systems, 142 (6), pp. 413-416 (1995).

5. A. Jakšić, G. Ristić, M. Pejović, "Rebound effect in power VDMOSFETs due to latent interface-trap generation", Electronics Letters, 31 (14), pp. 1198-1199 (1995).

6. V. Marković, Z. Petrović and M. Pejović, "Influence of impurities on surface recombination of nitrogen atoms in late afterglow", Jpn. J. Appl. Phys., 34, pp. 2466-2470 (1995).

7. Z. Savić, B. Radenović, M. Pejović and N. Stojadinović, "The contribution of border traps to threshold voltage shift in PMOS dosimetric transistors", IEEE Trans. Nucl. Sci., 42 (4), pp. 1445-1554 (1995).

1994.

1. M. Pejović, S. Golubović, G. Ristić, M. Odalović, "Annealing of gamma-irradiated Al - gate NMOS transistors", Solid-State Electronics, 37 (1), pp. 215-216 (1994).

2. M. Pejović, S. Golubović, G. Ristić, M. Odalović, "Temperature and gate bias effects on gamma - irradiated Al - gate metal - oxide - semiconductor transistors", Japanese Journal of Applied Physics, 33 (2), pp. 986-990 (1994).

3. G. Ristić, S. Golubović, M. Pejović, "pMOS dosimeter with two-layer gate oxide operated at zero and negative bias", Electronics Letters, 30 (4), pp. 295-296 (1994).

4. S. Golubović, G. Ristić, M. Pejović, S. Dimitrijev, "The role of interface traps in rebound mechanisms", Physica Status Solidi (a), 143, pp. 333-339 (1994).

5. V. Marković, M. Pejović and Z. Petrović, "Kinetics of activated nitrogen states in late afterglow by the time-delay method", J. Phys. D: Appl. Phys., 27, pp. 979-984 (1994).

6. V. Marković, Z. Petrović and M. Pejović, "Surface recombination of atoms in a nitrogen afterglow", J. Chem. Phys., 100 (11), pp. 8514-8521 (1994).

1993.

1. G. Ristić, S. Golubović, M. Pejović, "pMOS transistors for dosimetric application", Electronics Letters, 29 (18), pp. 1644-1646 (1993).

2. M. Pejović, G. Ristić, S. Golubović, "A comparison between thermal annealing and UV -radiation annealing of gamma - irradiated NMOS transistors", Physica Status Solidi (a), 140, pp. K53-K57 (1993).

3. V. Marković, M. Pejović and Z. Petrović, "Explanation of memory curve for nitrogen by surface-catalised excitation", J. Phys. D: Appl. Phys., 26, pp. 1611-1613 (1993).

1992.

1. S. Golubović, M. Pejović, S. Dimitrijev and N. Stojadinović, "UV-radiation annealing of the electron and X-irradiation damaged CMOS transistors", Phys. Stat. Sol. (a), 129, pp. 569-575 (1992).

2. M. Pejović and V. Marković, "Decay of positive space charge in nitrogen afterglow", J. Phys. D: Appl. Phys., 25, pp. 1217-1220 (1992).

1991.

1. M. Pejović, V. Marković and Č. Milosavljević, "Separation of ionic and metastable contributions to breakdown initiation in nitrogen", J. Phys. D: Appl. Phys., 24, pp. 677-680 (1991).

2. M. Pejović, V. Marković and S. Mekić, "Electrical breakdown time delay distribution in nitrogen for small value of the aftrglow period", J. Phys. D: Appl. Phys., 24, pp. 779-781 (1991).

1989.

1. M. Pejović and G. Krstić, "Non-radiative lifetime of metastable states in helium and helium-neon mixture", J. Phys. D: Appl. Phys., 22, pp. 235-237 (1989).

2. M. M. Pejović and M. K. Radović, "Influence of electrode temperature on auxiliary discharge on the electrical breakdown in helium", Acta Phys. Acad. Sci. Hungarica, 65 (1), pp. 19-23 (1989).

3. S. Dimitrijev, S. Golubović, D. Župac, M. Pejović and N. Stojadinović, "Analysis of gamma-radiation nduced instability mechanisms in CMOS transistors", Solid-State Electronics, 32 (5), pp. 349-353 (1989).

4. M. Pejović and R. Filipović, "Method for determining the breakdovn voltage in gas-filled tubes", Int. J. Electronics, 67 (2), pp. 251-256 (1989).

5. M. Peyovich, R. Filipovich, "Isledovanie napryadzeniya proboya gazovogo razryada", Svetotehnika, 10, pp. 14-16 (1989).

1988.

1. M. Peyovich and B. Miyovich, "Elektricheskoy proboy vyzvannyy polodzitelnimi ionimi i metastabilnimi sostoyaniyami v nekatoryh gazah pri ponidzennom davlenii", Dhurnal Teh. Fiz, 58, Vol. 11, str. 2124-2128 (English transl. Sov. Phys.-Tech. Phys., Vol. 33, pp. 1290 (1988).

1986.

1. Đ. A. Bošan and M. M. Pejović, "Generation of metastables at 637 K and their deextitation in flowing gases", Acta Phys. Hungarica, 59, (3-7), pp. 239-245 (1986).

2. M. M. Pejović, Đ. A. Bošan and S. M. Golubović, "Generation of metastables in nitrogen glow discharge", Acta Phys. Acad. Sci. Hungarica, 59, pp. 273-278 (1986).

1984.

1. M. M. Pejović, B. J. Mijović and Đ. A. Bošan, "Influence of electrode surface and some gas phase processes on electrical breakdown in nitrogen-filled diodes", J. Phys. D: Appl. Phys., 17, pp. 351-55 (1984).

1983.

1. M. M. Pejović, B. J. Mijović and Đ. A. Bošan, "Memory curves in the rare gases", J. Phys. D: Appl. Phys., 16, pp. L149-151 (1983).

2. M. M. Pejović, B. J. Mijović and Đ. A. Bošan, "Laue distribution on large values of time delay of electrical breakdown in nitrogen", J. Phys. D: Appl. Phys., 16, pp. 1953-1957 (1983).

1982.

1. M. M. Pejović, Đ. A. Bošan and Z. Nikolic, "Distribution of time delay of electrical breakdown in nitrogen", J. Phys. D: Appl. Phys., 15, pp. 867-872 (1982).

2. M. M. Pejović, Đ. A. Bošan and B. A. Nallbani, "Relation between secondary ionization coefficient and electrical breakdown in nitrogen", J. Phys. D: Appl. Phys., 15, pp. L31-34 (1982).

3. M. M. Pejović and B. Dimitrijević, "Electrical breakdown induced by long lived metastable states in nitrogen", J. Phys. D: Appl. Phys., 15, pp. L87-90 (1982).

1981.

1. M. M. Pejović, and Đ. A. Bošan, "Influence of electrode temperature on the metastable atom concentration in argon-filled diode", J. Phys. D: Appl. Phys., 14, pp. 693-698 (1981).

2. M. M. Pejović, Đ. A. Bošan and Đ. M. Krmpotić, "Influence of electrode material on time delay of electrical breakdown in gases", Contributions to Plasma Physics, 21 (3), pp. 211-214 (1981).

1980.

1. Đ. A. Bošan, M. M. Pejović and M. V. Vujović,"Metastable states in gases with lives over 24 hours", Acta Phys. Acad. Sci. Hungarica, 49 (1-3), pp. 23-38 (1980).

2. Đ. A. Bošan and M. M. Pejović, "Influence of cathode material work function on secondary emission of electrons induced by metastable states in gases", FIZIKA, Journal of Experim. And Theoret. Physics, 12 (S1), pp. 371-374 (1980).

1979.

1. Đ. A. Bošan and M. M. Pejović, "Dependence of time delay of breakdown on electrodes temperature in nitrogen-filled diodes", J. Phys. D: Appl. Phys., 12, pp. 1699-1702 (1979).

1976.

1. M. M. Pejović, D. V. Petrović,"Monte-Carlo simulation of hot carrier noise", FIZIKA, a Journal of Experim. and Theoret. Physics, 8, pp. 61-62 (1976).

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From October 23 to 26, 2012, Goran Ristic visited the University of Granada

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